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Quantum Ballistic Simulation of Nanoscale Double Gate Mosfet



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In ultimately scaled technology CMOS circuit leakage power would be significantly reduced by double gate nMOSFET devices. Quantum Ballistic Simulation of Nanoscale Double Gate Mosfet Book. The above SchrödingerPoisson model is able to describe only the ballistic .


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Read Quantum Ballistic Simulation of Nanoscale Double Gate Mosfet book reviews author details and more at Amazon.in. A novel computationally efficient approach for simulation of quantum transport in nanoscale devices is proposed. INTRODUCTION MOSFET channel lengths continue to shrink rapidly toward the sub10 nm dimensions called for by the International Technology Roadmap for Semiconductors 1 2. in nanoscale doublegate MOSFETs . by E Farzana 2012 Quantum Ballistic Transport Model has been used to demonstrate the performance of the device in terms of threshold voltage drain current in both low and high . httpswww.lap . by G Curatola 2004 Cited by 39 Modelling and simulation challenges for nanoscale MOSFETs in the ballistic limit . Quantum Ballistic Transport Model has been used to demonstrate the performance of the device in terms of threshold voltage drain current in both low and high drain voltage regions and subthreshold swing. 2D charge density and injection velocity extracted at the charge control point versus V for the 5nm body n dotted line and p solid line MOSFETs. such as charge carrier transport models classical and quantum carrier . It is a symmetrical device consisting in a Sichannel separated by thin SiO. Numerical simulations provide detailed information Fig. This article considers a silicon Double Gate transistor schematically depicted in Figure 1. This is mainly due to the superior control of short channel effects SCEs because of the reduced influence of the drain voltage on the channel charge. by AA Sidorov 2004 Cited by 6 A quantummechanical simulation method is proposed whereby the. PartialCoupled ModeSpace A new Approach for Efficient Simulation of Ballistic Quantum.